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Proceedings Paper

The effects of monolayer thickness and sheet doping density on dark current and noise current in quantum dot infrared photodetectors
Author(s): Chee Hing Tan; Souye C. Liew Tat Mun; Peter Vines; John P. R. David; Mark Hopkinson; Luke Wilson; Pantelis Aivaliotis
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Paper Abstract

We report measurements on a series of quantum dot infrared photodetectors grown with different combinations of monolayer thicknesses (2.2. 2.55 and 2.9 ML) and quantum dot layer sheet doping densities (6×1010 cm-2 and 12×1010 cm-2). The dark current and noise current were higher in devices grown with sheet doping density of 12×1010 cm-2. At a given bias voltage the dark current and the noise current was found to be lowest in devices having 2.55 ML and sheet doping density of 6×1010 cm-2. This combination gives a sheet doping density to dot density ratio of approximately unity. Highest gain was achieved in devices with 2.55 ML and sheet doping density of 6×1010 cm-2.

Paper Details

Date Published: 16 October 2007
PDF: 5 pages
Proc. SPIE 6740, Optical Materials in Defence Systems Technology IV, 67400J (16 October 2007); doi: 10.1117/12.740701
Show Author Affiliations
Chee Hing Tan, The Univ. of Sheffield (United Kingdom)
Souye C. Liew Tat Mun, The Univ. of Sheffield (United Kingdom)
Peter Vines, The Univ. of Sheffield (United Kingdom)
John P. R. David, The Univ. of Sheffield (United Kingdom)
Mark Hopkinson, The Univ. of Sheffield (United Kingdom)
Luke Wilson, The Univ. of Sheffield (United Kingdom)
Pantelis Aivaliotis, The Univ. of Sheffield (United Kingdom)


Published in SPIE Proceedings Vol. 6740:
Optical Materials in Defence Systems Technology IV
James G. Grote; Francois Kajzar; Mikael Lindgren, Editor(s)

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