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Proceedings Paper

Discharge produced plasma source for EUV lithography
Author(s): V. Borisov; A. Eltzov; A. Ivanov; O. Khristoforov; Yu. Kirykhin; A. Vinokhodov; V. Vodchits; V. Mishhenko; A. Prokofiev
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Paper Abstract

Extreme ultraviolet (EUV) radiation is seen as the most promising candidate for the next generation of lithography and semiconductor chip manufacturing for the 32 nm node and below. The paper describes experimental results obtained with discharge produced plasma (DPP) sources based on pinch effect in a Xe and Sn vapour as potential tool for the EUV lithography. Problems of DPP source development are discussed.

Paper Details

Date Published: 12 April 2007
PDF: 8 pages
Proc. SPIE 6611, Laser Optics 2006: High-Power Gas Lasers, 66110B (12 April 2007); doi: 10.1117/12.740590
Show Author Affiliations
V. Borisov, Troitsk Institute for Innovation and Fusion Research (Russia)
A. Eltzov, Troitsk Institute for Innovation and Fusion Research (Russia)
A. Ivanov, Troitsk Institute for Innovation and Fusion Research (Russia)
O. Khristoforov, Troitsk Institute for Innovation and Fusion Research (Russia)
Yu. Kirykhin, Troitsk Institute for Innovation and Fusion Research (Russia)
A. Vinokhodov, Troitsk Institute for Innovation and Fusion Research (Russia)
V. Vodchits, Troitsk Institute for Innovation and Fusion Research (Russia)
V. Mishhenko, Troitsk Institute for Innovation and Fusion Research (Russia)
A. Prokofiev, Troitsk Institute for Innovation and Fusion Research (Russia)


Published in SPIE Proceedings Vol. 6611:
Laser Optics 2006: High-Power Gas Lasers

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