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Proceedings Paper

Output parameters of room-temperature green semiconductor lasers as a function of an active region geometry
Author(s): M. M. Zverev; N. A. Gamov; E. V. Zdanova; D. V. Peregoudov; V. B. Studionov; S. V. Sorokin; I. V. Sedova; S. V. Ivanov; P. S. Kop'ev
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Paper Abstract

Characteristics of low-threshold ZnSe-based room-temperature green semiconductor alsers are studied in detail as dependent on transverse size (h) of an active region. It is shown that the efficiency increases with increasing h, then passes through a maximum, and gradually falls down when h exceeds the cavity length L. The effect can be explained by taking into account the excitation of different transversal modes.

Paper Details

Date Published: 13 April 2007
PDF: 8 pages
Proc. SPIE 6612, Laser Optics 2006: Diode Lasers and Telecommunication Systems, 66120F (13 April 2007); doi: 10.1117/12.740170
Show Author Affiliations
M. M. Zverev, Moscow State Institute of Radio Engineering, Electronics and Automation (Russia)
N. A. Gamov, Moscow State Institute of Radio Engineering, Electronics and Automation (Russia)
E. V. Zdanova, Moscow State Institute of Radio Engineering, Electronics and Automation (Russia)
D. V. Peregoudov, Moscow State Institute of Radio Engineering, Electronics and Automation (Russia)
V. B. Studionov, Moscow State Institute of Radio Engineering, Electronics and Automation (Russia)
S. V. Sorokin, Ioffe Physico-Technical Institute (Russia)
I. V. Sedova, Ioffe Physico-Technical Institute (Russia)
S. V. Ivanov, Ioffe Physico-Technical Institute (Russia)
P. S. Kop'ev, Ioffe Physico-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 6612:
Laser Optics 2006: Diode Lasers and Telecommunication Systems

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