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Proceedings Paper

Ultrafast phase transition of Si by femtosecond laser pulse irradiation
Author(s): Masayuki Fujita; Yusaku Izawa; Masaki Hashida; Yuichi Setsuhara; Yasukazu Izawa; Chiyoe Yamanaka
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Paper Abstract

Ablation and amorphization of crystalline Si by ultrashort pulse laser irradiation is reported in this paper. Laser pulse width was changed in the range of 100fs-200ps. We investigated the dependences of ablation rate and fluence for amorphization on laser pulse width. From the dependence of ablation rate, we derived the "effective" light penetration depth, which was much shorter than that calculated from spectroscopic data. At the lower fluence than single shot ablation threshold, femtosecond laser irradiation induced amorphization of crystalline Si. Thickness of the amorphoized layer, which was about 50nm and almost uniform, did not depend on the number of irradiated laser pulses and fluence. The interaction process was investigated by an imaging pump-probe technique.

Paper Details

Date Published: 8 May 2007
PDF: 7 pages
Proc. SPIE 6346, XVI International Symposium on Gas Flow, Chemical Lasers, and High-Power Lasers, 63463S (8 May 2007); doi: 10.1117/12.739427
Show Author Affiliations
Masayuki Fujita, Institute for Laser Technology (Japan)
Yusaku Izawa, Osaka Univ. (Japan)
Masaki Hashida, Kyoto Univ. (Japan)
Yuichi Setsuhara, Osaka Univ. (Japan)
Yasukazu Izawa, Osaka Univ. (Japan)
Chiyoe Yamanaka, Osaka Univ. (Japan)


Published in SPIE Proceedings Vol. 6346:
XVI International Symposium on Gas Flow, Chemical Lasers, and High-Power Lasers

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