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Proceedings Paper

Randomly oriented indium phosphide nanowires for optoelectronics
Author(s): Nobuhiko P. Kobayashi; V. J. Logeeswaran; Xuema Li; M. Saif Islam; Joseph Straznicky; Shih-Yuan Wang; R. Stanley Williams
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Paper Abstract

The concept of randomly-oriented semiconductor nanowires formed on non-single-crystal substrates is introduced and compared with semiconductor nanowires synthesized on single-crystal-substrates in the framework of epitaxial growth. In principle, epitaxial growth of semiconductor nanowires with the presence of metal-catalysts requires no single-crystal substrates owing to the small size of nanowires. A segment on a substrate from which crystallographic information is transferred to a single nanowire would only need to be as larger as the cross-section of a nanowire if a specific geometrical alignment for a group of nanowires is not required, suggesting that randomly-oriented semiconductor nanowires be formed on a surface that is characterized with short-range atomic order in contrast to long-range atomic order that exists on the surface of single-crystal substrates. The surfaces exhibiting short-range atomic order can be prepared on non-single-crystal substrates, further suggesting functional devices that utilize randomly-oriented semiconductor nanowires be fabricated on non-single-crystal substrates. Design, fabrication and characteristics of a photoconductor that utilizes an ensemble of randomly-oriented indium phosphide nanowires are described.

Paper Details

Date Published: 10 September 2007
PDF: 11 pages
Proc. SPIE 6779, Nanophotonics for Communication: Materials, Devices, and Systems IV, 67790E (10 September 2007); doi: 10.1117/12.739398
Show Author Affiliations
Nobuhiko P. Kobayashi, Univ. of California, Santa Cruz (United States)
Hewlett-Packard Labs. (United States)
V. J. Logeeswaran, Univ. of California, Davis (United States)
Xuema Li, Hewlett-Packard Labs. (United States)
M. Saif Islam, Univ. of California, Davis (United States)
Joseph Straznicky, Hewlett-Packard Labs. (United States)
Shih-Yuan Wang, Hewlett-Packard Labs. (United States)
R. Stanley Williams, Hewlett-Packard Labs. (United States)

Published in SPIE Proceedings Vol. 6779:
Nanophotonics for Communication: Materials, Devices, and Systems IV
Nibir K. Dhar; Achyut Kumar Dutta; M. Saif Islam, Editor(s)

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