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Proceedings Paper

Ge/Al bilayer thin film for optical write-once media
Author(s): T. H. Wu; P. C. Kuo; Jung-Po Chen; Chih-Yuan Wu; Po-Fu Yen; Tzuan-Ren Jeng; Der-Ray Huang; Sin-Liang Ou
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Paper Abstract

Ge/Al bilayer thin films are prepared by magnetron sputtering. Thermal analysis shows that the phase change of the film occurs at 275 °C. Contrasts at 650 nm and 405 nm wavelength are 71.4% and 31.1% respectively.

Paper Details

Date Published: 11 July 2007
PDF: 6 pages
Proc. SPIE 6620, Optical Data Storage 2007, 66202E (11 July 2007); doi: 10.1117/12.738895
Show Author Affiliations
T. H. Wu, National Taiwan Univ. (Taiwan)
P. C. Kuo, National Taiwan Univ. (Taiwan)
Jung-Po Chen, Industrial Technology Research Institute (Taiwan)
Chih-Yuan Wu, National Chiao Tung Univ. (Taiwan)
Po-Fu Yen, Industrial Technology Research Institute (Taiwan)
Tzuan-Ren Jeng, Industrial Technology Research Institute (Taiwan)
Der-Ray Huang, Hsinchu Science Park (Taiwan)
Sin-Liang Ou, National Taiwan Univ. (Taiwan)


Published in SPIE Proceedings Vol. 6620:
Optical Data Storage 2007

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