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Proceedings Paper

Silicon resonant cavity enhanced photodetectors based on internal photoemission effect
Author(s): M. Casalino; L. Sirleto; L. Moretti; F. Della Corte; I. Rendina
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Paper Abstract

In this paper, the design of resonant cavity enhanced photodetectors, working at 1.55 micron and based on silicon technology, is reported. The photon absorption is due to internal photoemission effect over the Schottky barrier at the metal-silicon interface. A comparison is presented among three different photodetectors having as Schottky metal: gold, aluminium or copper respectively. In order to quantify the performance of photodetector, quantum efficiency including the image force effect, as a function of bias voltage is calculated.

Paper Details

Date Published: 2 July 2007
PDF: 4 pages
Proc. SPIE 6619, Third European Workshop on Optical Fibre Sensors, 661931 (2 July 2007); doi: 10.1117/12.738586
Show Author Affiliations
M. Casalino, Istituto per la Microelettronica e Microsistemi, Consiglio Nazionale delle Ricerche (Italy)
Univ. degli Studi Mediterranea di Reggio Calabria (Italy)
L. Sirleto, Istituto per la Microelettronica e Microsistemi, Consiglio Nazionale delle Ricerche (Italy)
L. Moretti, Univ. degli Studi Mediterranea di Reggio Calabria (Italy)
F. Della Corte, Univ. degli Studi Mediterranea di Reggio Calabria (Italy)
I. Rendina, Istituto per la Microelettronica e Microsistemi, Consiglio Nazionale delle Ricerche (Italy)


Published in SPIE Proceedings Vol. 6619:
Third European Workshop on Optical Fibre Sensors

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