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Proceedings Paper

High performance organic field-effect transistors with fluoropolymer gate dielectric
Author(s): Wolfgang L. Kalb; Thomas Mathis; Simon Haas; Arno F. Stassen; Bertram Batlogg
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Paper Abstract

Electrical stability is essential for a successful commercialization of organic semiconductor devices. We report on organic field-effect transistors with unprecedented electrical stability. The single crystal and thin-film transistors employ a fluorocarbon polymer as gate dielectric (CytopTM) and pentacene or rubrene as the organic semiconductor. CytopTM (Cyclic Transparent Optical Polymer) is easy to be used and can be deposited in air from solution. It is highly hydrophobic and has a very low permittivity of ∈i = 2.1 - 2.2. Moreover, the material is a good electrical insulator with a very high dielectric breakdown field. Its passive surface leads to extremely stable field-effect transistors with a high field-effect mobility, an outstanding subthreshold swing as low as 0.75 nFV/(decade cm2) and a near zero onset voltage. Of particular significance is the resistance of the devices against long-term gate bias stress. Oligomeric organic semiconductors can have a very high electrical stability when combined with a suitable gate dielectric. CytopTM is an ideal gate dielectric for organic electronics and it seems very likely that the material leads to outstanding transistors in combination with many small molecule organic semiconductors.

Paper Details

Date Published: 13 September 2007
PDF: 9 pages
Proc. SPIE 6658, Organic Field-Effect Transistors VI, 665807 (13 September 2007); doi: 10.1117/12.738522
Show Author Affiliations
Wolfgang L. Kalb, ETH Zürich (Switzerland)
Thomas Mathis, ETH Zürich (Switzerland)
Simon Haas, ETH Zürich (Switzerland)
Arno F. Stassen, ETH Zürich (Switzerland)
Bertram Batlogg, ETH Zürich (Switzerland)


Published in SPIE Proceedings Vol. 6658:
Organic Field-Effect Transistors VI
Zhenan Bao; David J. Gundlach, Editor(s)

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