Share Email Print
cover

Proceedings Paper

Growth kinetics of InP nanowires heteroepitaxially grown on a silicon surface
Author(s): Ataur R. Sarkar; Ibrahim Kimukin; Christopher W. Edgar; Sung Soo Yi; Christoph Mitterbauer; Nigel Browning; M. Saif Islam
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Low temperature metal catalyzed InP nanowires with diameters ranging from 50nm to 500nm using a single step MOCVD process at 450°C on (111)-oriented silicon substrates have been synthesized. The diameter range is much higher than the critical limit (~24nm for InP on silicon) reported by a recent theoretical work on coherent growth of nanowire heterostructures. This article presents the results of our investigation to highlight the possible factors that lead to the unusually large diameters and help realize stable nanowire heterostructures in a highly lattice mismatched material system. Our analysis finds dislocations formed at the interfacial plane of the heterostructure due to high lattice mismatch is the most influential factor contributing to very large diameters. We have simulation results which indicate that each added pair of orthogonal dislocation lines at the interfacial plane between InP and silicon supports ~12nm increase in the nanowire diameter. A maximum nanowire density of ~5×108 cm-2 is estimated with growth rates ranging from 0.1 µm/min for the shortest nanowires and 10 μm/min for the longest ones.

Paper Details

Date Published: 11 October 2007
PDF: 10 pages
Proc. SPIE 6768, Nanomaterials Synthesis, Interfacing, and Integrating in Devices, Circuits, and Systems II, 676804 (11 October 2007); doi: 10.1117/12.738469
Show Author Affiliations
Ataur R. Sarkar, Univ. of California, Davis (United States)
Ibrahim Kimukin, Univ. of California, Davis (United States)
Christopher W. Edgar, Univ. of California, Davis (United States)
Sung Soo Yi, Agilent Technologies (United States)
Christoph Mitterbauer, Univ. of California, Davis (United States)
Nigel Browning, Univ. of California, Davis (United States)
M. Saif Islam, Univ. of California, Davis (United States)


Published in SPIE Proceedings Vol. 6768:
Nanomaterials Synthesis, Interfacing, and Integrating in Devices, Circuits, and Systems II
Nibir K. Dhar; Achyut K. Dutta; M. Saif Islam, Editor(s)

© SPIE. Terms of Use
Back to Top