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Proceedings Paper

Capacitance-voltage characteristics of organic thin-film transistors
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Paper Abstract

We have fabricated pentacene-based thin film field-effect transistors and analyzed quasi-static current and capacitance measurements as a function of gate bias. The latter provides an independent and accurate estimation of the threshold voltage, an important device parameter that cannot be extracted unambiguously from the I-V measurements. The C-V characteristics of the transistors were furthermore characterized using impedance spectroscopy as a function of frequency and gate bias for the zero drain bias case. We model the impedance data with a simple transmission line equivalent circuit and find that the frequency dependence of the capacitance and phase can be described adequately from the channel conductance, as determined from quasi static current-voltage measurements, and the geometrical values of the channel and source/drain to gate electrode overlap capacitances.

Paper Details

Date Published: 21 September 2007
PDF: 9 pages
Proc. SPIE 6658, Organic Field-Effect Transistors VI, 665802 (21 September 2007); doi: 10.1117/12.737252
Show Author Affiliations
G. H. Gelinck, TNO (Netherlands)
Erik van Veenendaal, Polymer Vision (Netherlands)
H. van der Vegte, Philips Research (Netherlands)
R. Coehoorn, Philips Research (Netherlands)


Published in SPIE Proceedings Vol. 6658:
Organic Field-Effect Transistors VI
Zhenan Bao; David J. Gundlach, Editor(s)

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