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Proceedings Paper

Quantitative measurement of EUV resist outgassing
Author(s): Greg Denbeaux; Rashi Garg; Justin Waterman; Chimaobi Mbanaso; Jeroen Netten; Robert Brainard; Yu-Jen Fan; Leonid Yankulin; Alin Antohe; Kevin DeMarco; Molly Jaffe; Matthew Waldron; Kim Dean
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Paper Abstract

The Mo/Si multilayer mirrors used for extreme ultraviolet (EUV) lithography can become contaminated during exposure in the presence of some hydrocarbons [1-3]. Because this leads to a loss in the reflectivity of the optics and throughput of the exposure tools, it needs to be avoided. Since photoresists are known to outgas during exposure to EUV radiation in a vacuum environment, the careful choice of materials is important to preserving the EUV optics. Work therefore has been performed to measure the species and quantities of molecules that outgas from EUV resists when exposed to EUV radiation [4-7].

Paper Details

Date Published: 3 May 2007
PDF: 5 pages
Proc. SPIE 6533, 23rd European Mask and Lithography Conference, 653318 (3 May 2007); doi: 10.1117/12.737192
Show Author Affiliations
Greg Denbeaux, Univ. at Albany (United States)
Rashi Garg, Univ. at Albany (United States)
Justin Waterman, Univ. at Albany (United States)
Chimaobi Mbanaso, Univ. at Albany (United States)
Jeroen Netten, Univ. at Albany (United States)
Robert Brainard, Univ. at Albany (United States)
Yu-Jen Fan, Univ. at Albany (United States)
Leonid Yankulin, Univ. at Albany (United States)
Alin Antohe, Univ. at Albany (United States)
Kevin DeMarco, Univ. at Albany (United States)
Molly Jaffe, Univ. at Albany (United States)
Matthew Waldron, Univ. at Albany (United States)
Kim Dean, SEMATECH, Inc. (United States)

Published in SPIE Proceedings Vol. 6533:
23rd European Mask and Lithography Conference
Uwe F. W. Behringer, Editor(s)

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