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Proceedings Paper

Electrical test structures for the characterisation of optical proximity correction
Author(s): Andreas Tsiamis; Stewart Smith; Martin McCallum; Andrew C. Hourd; J. Tom M. Stevenson; Anthony J. Walton
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Paper Abstract

Simple electrical test structures have been designed that will allow the characterisation of corner serif forms of optical proximity correction. The structures measure the resistance of a short length of conducting track with a right angled corner. Varying amounts of OPC can be applied to the outer and inner corners of the feature and the effect on the resistance of the track measured. These structures have been simulated and the results are presented in this paper. In addition a preliminary test mask has been fabricated which has test structures suitable for on-mask electrical measurement. Measurement results from these structures are also presented. Furthermore structures have been characterised using an optical microscope, a dedicated optical mask metrology system, an AFM scanner and finally a FIB system. In the future the test mask will be used to print the structures using a step and scan lithography tool so that they can be measured on-wafer. Correlation of the mask and wafer results will provide a great deal of information about the e ects of OPC at the CAD level and the impact on the final printed features.

Paper Details

Date Published: 3 May 2007
PDF: 9 pages
Proc. SPIE 6533, 23rd European Mask and Lithography Conference, 65330M (3 May 2007); doi: 10.1117/12.737112
Show Author Affiliations
Andreas Tsiamis, The Univ. of Edinburgh (United Kingdom)
Stewart Smith, The Univ. of Edinburgh (United Kingdom)
Martin McCallum, Nikon Precision Europe GmbH (United Kingdom)
Andrew C. Hourd, Compugraphics International Ltd. (United Kingdom)
J. Tom M. Stevenson, The Univ. of Edinburgh (United Kingdom)
Anthony J. Walton, The Univ. of Edinburgh (United Kingdom)


Published in SPIE Proceedings Vol. 6533:
23rd European Mask and Lithography Conference

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