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Proceedings Paper

Thick low-loss orientation-patterned gallium arsenide (OP-GaAs) samples for mid-infrared laser sources
Author(s): David Faye; Eric Lallier; Arnaud Grisard; Bruno Gérard; Christelle Kieleck; Antoine Hirth
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Paper Abstract

Nonlinear optical materials play a key role in the development of coherent sources of radiation as they permit the frequency conversion of mature solid-state lasers into spectral ranges where lasers do not exist or perform poorly. The availability of efficient quasi-phasematched infrared materials is thus considered as important for the development of several defense optronics applications. This paper will review the recent progresses we achieved with thick Orientation Patterned-GaAs structures. We will present results obtained in growing thick-layer (500 µm) on 2 cm long structures with very low optical losses (less than 0.02 cm-1). This loss coefficient is low enough to allow the realization of a high power OPO in the MIR band.

Paper Details

Date Published: 16 October 2007
PDF: 7 pages
Proc. SPIE 6740, Optical Materials in Defence Systems Technology IV, 67400I (16 October 2007); doi: 10.1117/12.737110
Show Author Affiliations
David Faye, Thales Research & Technology (France)
Eric Lallier, Thales Research & Technology (France)
Arnaud Grisard, Thales Research & Technology (France)
Bruno Gérard, Thales Research & Technology (France)
Christelle Kieleck, Institut Franco-Allemand de Recherches de Saint-Louis (United States)
Antoine Hirth, Institut Franco-Allemand de Recherches de Saint-Louis (United States)


Published in SPIE Proceedings Vol. 6740:
Optical Materials in Defence Systems Technology IV
James G. Grote; Francois Kajzar; Mikael Lindgren, Editor(s)

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