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Proceedings Paper

Modification of charge transport in single crystal rubrene
Author(s): Oleg Mitrofanov; D. V. Lang; T. Siegrist; W.-Y. So; C. Kloc; A. P. Ramirez
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Paper Abstract

To investigate the impact of impurities on properties of single crystals of rubrene (C48H24), we consider structural, charge transport and optical properties. We show that transport properties are strongly influenced by the presence of a bandgap acceptor state, commonly occurring in crystals of rubrene. The bandgap state is likely caused by incorporation of an oxygen-related impurity. We demonstrate that the impurity presence can be detected using optical spectroscopy. The impurity model explains commonly-observed variations of rubrene properties. The acceptor-like characteristics of the impurity suggests a possible approach for modification of the charge transport in molecular crystals.

Paper Details

Date Published: 13 September 2007
PDF: 4 pages
Proc. SPIE 6658, Organic Field-Effect Transistors VI, 66580G (13 September 2007); doi: 10.1117/12.737082
Show Author Affiliations
Oleg Mitrofanov, Alcatel-Lucent (United States)
D. V. Lang, Columbia Univ. (United States)
T. Siegrist, Alcatel-Lucent (United States)
W.-Y. So, Columbia Univ. (United States)
C. Kloc, Alcatel-Lucent (United States)
A. P. Ramirez, Alcatel-Lucent (United States)

Published in SPIE Proceedings Vol. 6658:
Organic Field-Effect Transistors VI
Zhenan Bao; David J. Gundlach, Editor(s)

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