Share Email Print
cover

Proceedings Paper

Simulation of MWIR and LWIR photodiodes based on n+-p and p-n junctions formed in HgCdTe heterostructures
Author(s): Galina V. Chekanova; Albina A. Drugova; Viacheslav Kholodnov; Mikhail S. Nikitin
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Realization of affordable large format high performance photovoltaic (PV) infrared (IR) Hg1-xCdxTe based focal plane arrays (FPA) covering spectral ranges Mid-Wave (MWIR) from 3 to 5.5 μm and extended Long-Wave (LWIR) from 8 to 14 μm requires comprehensive estimation of photodiodes performance depending on Hg1-xCdxTe material properties and operating conditions. Advanced Infrared Focal Plane Arrays include Mid-Wave (MWIR) 3-5.5 μm operating at temperatures Top=80-100 K and at higher temperatures (HOT) Top=200-240 K, extended Long-Wave (LWIR) 8-14 μm operating at temperatures Top=80-100 K and multi-color arrays. Perhaps novel FPA will be based on photodiodes (PD) with p-n junction opposite to usually used n+-p junction. PD with optimal p-n junction could have lower dark current value than same size n+-p junction. It is desirable for proper multiplexing of PD arrays to Silicon Read-out Integrated Circuits (ROICs). Comparative analysis of LWIR PD performance at 80 K and 100 K is needed also due to strong tendency to lowering weight and power consumption of perspective megapixel FPA. Objective of the present work was to calculate Hg1-xCdxTe MWIR and LWIR PV FPA (λp equals to 4.5-4.8 μm at Top=225 K responding 2-3 stages thermal electric cooler temperature and 8.0-9.0 and 10.0-10.5 μm at Top=80-100 K) performance variation with doping level, absorber thickness, surface recombination rate and operating temperature.

Paper Details

Date Published: 8 October 2007
PDF: 9 pages
Proc. SPIE 6737, Electro-Optical and Infrared Systems: Technology and Applications IV, 673714 (8 October 2007); doi: 10.1117/12.736830
Show Author Affiliations
Galina V. Chekanova, Alpha (Russia)
Albina A. Drugova, Institute of Radio-engineering and Electronics (Russia)
Viacheslav Kholodnov, Institute of Radio-engineering and Electronics (Russia)
Mikhail S. Nikitin, Alpha (Russia)


Published in SPIE Proceedings Vol. 6737:
Electro-Optical and Infrared Systems: Technology and Applications IV
David A. Huckridge; Reinhard R. Ebert, Editor(s)

© SPIE. Terms of Use
Back to Top