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Proceedings Paper

Theoretical model and simulation of the extremely short external cavity semiconductor laser
Author(s): Guangqiong Xia; Zhengmao Wu; Jiagui Wu; Zhaoyun Li; Qi Yang; Bingxing Yang
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Paper Abstract

Based on the ray tracing method, the implicit expression of the output spectrum of the extremely short external cavity semiconductor Laser (ESECSL) is derived, and the output spectrum and P-I characteristic of the ESECSL are investigated. The results show that: when the length of external cavity is changed at the order of wavelength, the P-I characteristics of the ESECSL will undergo significant changes; with the variation of the external cavity length, the lasing wavelength of ESECSL will behave cyclical jump in the range of 10nm. Especially, for the external cavity length changed within the range of 40μm-70μm, the jump range of the lasing wavelength will reach the maximum. The simulations well agree with the experimental results reported.

Paper Details

Date Published: 19 November 2007
PDF: 9 pages
Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67821G (19 November 2007); doi: 10.1117/12.736619
Show Author Affiliations
Guangqiong Xia, Southwest Univ. (China)
Zhengmao Wu, Southwest Univ. (China)
Jiagui Wu, Southwest Univ. (China)
Zhaoyun Li, Southwest Univ. (China)
Qi Yang, Southwest Univ. (China)
Bingxing Yang, Southwest Univ. (China)


Published in SPIE Proceedings Vol. 6782:
Optoelectronic Materials and Devices II
Yoshiaki Nakano, Editor(s)

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