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Proceedings Paper

Understanding the unusual conduction mechanism in InN nanowires
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Paper Abstract

InN is an attractive material for novel nanoscale optoelectronic devices due to its low band gap and superior transport characteristics. Recently, Chang et al. [J. Electron. Mater. 35, 738 (2006)] presented measurements showing an anomalous resistance observed for InN nanowires with diameters less than 90nm. We examine possible theories presented in literature to explain the extraordinary observation and propose a possible explanation for the reported observations based on the unique attribute of InN − high density surface electron accumulation layer. The presence of high density accumulation layer at the surface leads to two distinct conduction mechanisms in InN viz. surface and bulk. For large diameter InN nanowires, bulk conduction is proposed to be the dominant mechanism whereas in small diameter nanowires both surface and bulk conduction contribute to carrier transport.

Paper Details

Date Published: 11 October 2007
PDF: 8 pages
Proc. SPIE 6768, Nanomaterials Synthesis, Interfacing, and Integrating in Devices, Circuits, and Systems II, 67680F (11 October 2007); doi: 10.1117/12.736577
Show Author Affiliations
Anurag Chaudhry, Univ. of California, Davis (United States)
M. Saif Islam, Univ. of California, Davis (United States)


Published in SPIE Proceedings Vol. 6768:
Nanomaterials Synthesis, Interfacing, and Integrating in Devices, Circuits, and Systems II
Nibir K. Dhar; Achyut K. Dutta; M. Saif Islam, Editor(s)

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