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Proceedings Paper

Innovative optical technique speeds up LED wafer scribing production
Author(s): Leon Chen; Richard Y. L. Hsu; Robbie J. Z. Lee; Todd Lizotte
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Paper Abstract

Laser scribing technology was introduced in LED wafer singulation four years ago and has been gaining significant success. But as GaN/Sapphire wafers keep shrinking the LED chip size (8mil) yet continue to remain on a 2" wafer size, laser process engineers face heavy pressure from the LED industry to further increase throughput. Since raising laser power degrades the performance of GaN, a process engineer can't just substitute a higher power laser and expect quicker throughput. Even if the scribing speed can be increased with a higher powered laser, the efficiency on throughput won't be significant because of the small wafer size and enormous amount of dicing streets. In order to efficiently utilize a more powerful laser, beam splitting optic need to be employed to scribe the wafer with simultaneous multiple beams. During production we used a triple beam design and found that even scribing at one-third the speed, we can get more than 30% increase in throughput. How this technique adapts into this application will be presented in this paper, as well as the challenges encountered under a real production environment.

Paper Details

Date Published: 26 September 2007
PDF: 8 pages
Proc. SPIE 6663, Laser Beam Shaping VIII, 66630J (26 September 2007); doi: 10.1117/12.736470
Show Author Affiliations
Leon Chen, Uni-Via Technology Inc. (Taiwan)
Richard Y. L. Hsu, Uni-Via Technology Inc. (Taiwan)
Robbie J. Z. Lee, Uni-Via Technology Inc. (Taiwan)
Todd Lizotte, Hitachi Via Mechanics USA, Inc. (United States)


Published in SPIE Proceedings Vol. 6663:
Laser Beam Shaping VIII
Fred M. Dickey; David L. Shealy, Editor(s)

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