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Proceedings Paper

Design, fabrication, and testing of enhanced EO materials for mmW modulators
Author(s): Brandon Redding; Nikolai Faleev; Xi Long; Timothy Creazzo; Shouyuan Shi; Dennis Prather
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Paper Abstract

We seek to incorporate enhanced electro-optic (EO) materials into mmW imaging systems. EO based mmW detection systems have demonstrated sub-picowatt noise equivalent power while overcoming many of the drawbacks inherent in other systems including size, cooling, and cost. Current EO imaging systems rely on LiNbO3 modulators because of its strong EO effect. The linear EO effect, which only exists in non-centro-symmetric materials, has been shown to increase by orders of magnitude in quantum confined materials. III-V quantum dot materials offer the potential for a stronger EO effect than LiNbO3 while providing the advantages of III-V semiconductor integration. We focus on MBE grown InAs quantum dots in a GaAs matrix and offer XRD and AFM characterization These quantum dot materials are incorporated into an external Mach-Zehnder Interferometer setup where the Vπ is measured experimentally allowing us to extract an EO coefficient for the InAs/GaAs quantum dot layer of 39.4pm/V, an order of magnitude improvement relative to the bulk coefficients.

Paper Details

Date Published: 11 September 2007
PDF: 6 pages
Proc. SPIE 6645, Nanoengineering: Fabrication, Properties, Optics, and Devices IV, 66450P (11 September 2007); doi: 10.1117/12.736247
Show Author Affiliations
Brandon Redding, Univ. of Delaware (United States)
Nikolai Faleev, Univ. of Delaware (United States)
Xi Long, Univ. of Delaware (United States)
Timothy Creazzo, Univ. of Delaware (United States)
Shouyuan Shi, Univ. of Delaware (United States)
Dennis Prather, Univ. of Delaware (United States)


Published in SPIE Proceedings Vol. 6645:
Nanoengineering: Fabrication, Properties, Optics, and Devices IV
Elizabeth A. Dobisz; Louay A. Eldada, Editor(s)

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