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Proceedings Paper

Light emitting diodes based on GaPN/Si for optoelectronic integrated circuits
Author(s): Y. Furukawa; H. Yonezu; A. Wakahara
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Paper Abstract

We have tried to monolithically merge light emitting devices into Si large-scale integrated circuits in a single chip for realization of optoelectronic integrated circuits (OEICs). OEICs could be realized for parallel information processing, optical interconnection and other applications. Structural defect-free GaPN and InGaPN layers were grown on a Si (100) substrate by using migration enhanced epitaxy and molecular beam epitaxy. A dislocation-free Si/GaPN/Si structure, which is a basic structure for OEICs, was successfully grown as well. In addition, control of electron and hole concentrations in GaPN was achieved by S(or Te)- and Mg-doping, respectively. Subsequently, a lattice-matched InGaPN/GaPN double-heterostructure (DH) light emitting diode (LED) was realized on a Si substrate. Moreover, fabrication process flow for OEIC was developed and applied to a Si/InGaPN/GaPN DH LED/Si layers. As a result, LEDs and metal-oxide-semiconductor field effect transistors were monolithically integrated in a single chip for the first time. When the luminescence efficiency is improved and micro-size LEDs based on GaPN are developed, novel OEICs would be realized.

Paper Details

Date Published: 10 September 2007
PDF: 8 pages
Proc. SPIE 6775, Active and Passive Optical Components for Communications VII, 67750M (10 September 2007); doi: 10.1117/12.735932
Show Author Affiliations
Y. Furukawa, Toyohashi Univ. of Technology (Japan)
H. Yonezu, Toyohashi Univ. of Technology (Japan)
A. Wakahara, Toyohashi Univ. of Technology (Japan)


Published in SPIE Proceedings Vol. 6775:
Active and Passive Optical Components for Communications VII
Achyut Kumar Dutta; Yasutake Ohishi; Niloy K. Dutta; Andrei V. Lavrinenko, Editor(s)

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