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Proceedings Paper

Temperature evolution of exciton absorptions in Cd1-xZnxTe materials
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Paper Abstract

These studies consist of measuring the frequency dependent transmittance (T(ω)) and reflectance (R(ω)) above and below the optical band-gap in the UV/Visible and infrared frequency ranges for Cd1-xZnxTe materials for x=0 and x=0.04. Measurements were also done in the temperature range from 5 to 300 K. The results show that the optical gap near 1.49 eV at 300 K increases to 1.62 eV at 5 K. Finally, we observe sharp absorption peaks near this gap energy at low temperatures for the x=0.04 sample. The close proximity of these peaks to the optical transition threshold suggests that they originate from the creation of bound electron-hole pairs or excitons. The decay of these excitonic absorptions may contribute to a photoluminescence and transient background response of these back-illuminated HgCdTe CCD detectors.

Paper Details

Date Published: 17 September 2007
PDF: 10 pages
Proc. SPIE 6692, Cryogenic Optical Systems and Instruments XII, 669206 (17 September 2007); doi: 10.1117/12.735604
Show Author Affiliations
Manuel A. Quijada, NASA Goddard Space Flight Ctr. (United States)
Ross Henry, NASA Goddard Space Flight Ctr. (United States)

Published in SPIE Proceedings Vol. 6692:
Cryogenic Optical Systems and Instruments XII
James B. Heaney; Lawrence G. Burriesci, Editor(s)

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