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Proceedings Paper

High performance organic field-effect transistors using high-Κ dielectrics grown by atomic layer deposition (ALD)
Author(s): Xiao-Hong Zhang; Benoit Domercq; Xudong Wang; Seunghyup Yoo; Takeshi Kondo; Zhong Lin Wang; Bernard Kippelen
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Paper Abstract

We report on high performance field-effect transistors fabricated with pentacene as an active material and Al2O3 as a gate dielectric material grown by atomic layer deposition (ALD). These transistors were operated in enhancement mode with a zero turn-on voltage and exhibited a low threshold voltage (< -10 V) as well as a low subthreshold slope (< 1 V/decade) and an on/off current ratio larger than 106. Hole mobility values of 1.5 ± 0.2 cm2/Vs were obtained when using heavily n-doped silicon (n+-Si) as gate electrodes and substrates. Atomic force microscopy (AFM) images of pentacene films on Al2O3 treated with octadecyltrichlorosilane (OTS) revealed well-ordered island formation, and X-ray diffraction patterns showed characteristics of a "thin film" phase. Compared with thermally-grown SiO2, Al2O3 gate insulators have lower surface trap density and higher capacitance density, to which the high performance of pentacene field-effect transistors can be attributed.

Paper Details

Date Published: 21 September 2007
PDF: 9 pages
Proc. SPIE 6658, Organic Field-Effect Transistors VI, 66580T (21 September 2007); doi: 10.1117/12.735238
Show Author Affiliations
Xiao-Hong Zhang, Georgia Institute of Technology (United States)
Benoit Domercq, Georgia Institute of Technology (United States)
Xudong Wang, Georgia Institute of Technology (United States)
Seunghyup Yoo, Georgia Institute of Technology (United States)
Takeshi Kondo, Georgia Institute of Technology (United States)
Zhong Lin Wang, Georgia Institute of Technology (United States)
Bernard Kippelen, Georgia Institute of Technology (United States)


Published in SPIE Proceedings Vol. 6658:
Organic Field-Effect Transistors VI
Zhenan Bao; David J. Gundlach, Editor(s)

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