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Proceedings Paper

A structure that more than doubles the intensity of an enhanced backscattering peak
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Paper Abstract

We present approaches to the design of a structure that produces an enhanced backscattering peak the ratio of whose height relative to the height of the background at its position can be as high as 40-50.

Paper Details

Date Published: 10 September 2007
PDF: 5 pages
Proc. SPIE 6672, Advanced Characterization Techniques for Optics, Semiconductors, and Nanotechnologies III, 66720G (10 September 2007); doi: 10.1117/12.735043
Show Author Affiliations
T. A. Leskova, Univ. of California, Irvine (United States)
A. A. Maradudin, Univ. of California, Irvine (United States)
E. R. Méndez, Ctr. de Investigación Científica y de Educación Superior de Ensenada (Mexico)
Zu-Han Gu, Surface Optics Corp. (United States)


Published in SPIE Proceedings Vol. 6672:
Advanced Characterization Techniques for Optics, Semiconductors, and Nanotechnologies III
Angela Duparré; Bhanwar Singh; Zu-Han Gu, Editor(s)

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