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Proceedings Paper

Characterization of radio-frequency sputtered AlN films by spectroscopic ellipsometry
Author(s): D. Huang; K. Uppireddi; V. M. Pantojas; W. Otaño-Rivera; B. R. Weiner; G. Morell
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Paper Abstract

Polycrystalline aluminum nitride films were deposited by reactive radio frequency magnetron sputtering on silicon and molybdenum substrates without substrate heating. Surface and microstructure properties were investigated by atomic force microscopy and x-ray diffraction. X-ray photoelectron spectroscopy was used to study the composition of the surface. Their optical properties were studied by spectroscopic ellipsometry in the 430-850 nm wavelength range and modeling was carried out. The optical properties so obtained were correlated with the AlN films' structure and crystalline quality.

Paper Details

Date Published: 19 September 2007
PDF: 9 pages
Proc. SPIE 6647, Nanocoatings, 66470M (19 September 2007); doi: 10.1117/12.734985
Show Author Affiliations
D. Huang, Univ. of Puerto Rico (United States)
K. Uppireddi, Univ. of Puerto Rico (United States)
V. M. Pantojas, Univ. of Puerto Rico (United States)
W. Otaño-Rivera, Univ. of Puerto Rico (United States)
B. R. Weiner, Univ. of Puerto Rico (United States)
G. Morell, Univ. of Puerto Rico (United States)


Published in SPIE Proceedings Vol. 6647:
Nanocoatings
Geoffrey B. Smith; Michael B. Cortie, Editor(s)

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