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Proceedings Paper

Germanium and InGaAs/InP SPADs for single-photon detection in the near-infrared
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Paper Abstract

Single-Photon Avalanche Diodes (SPADs) for near-infrared (800-1700 nm) wavelengths can be manufactured both in InGaAs/InP and in germanium. Recently, new InGaAs/InP SPADs became commercially available with good overall performances, but with the intrinsic bottleneck of strong afterpulsing effect, originated in the InP multiplication layer. At present, germanium technology is not exploited for single-photon detectors, but previous devices demonstrate lower afterpulsing even at very low temperatures and promising dark count rate when employing pure manufacturing process. In this work, we compare germanium and InGaAs/InP SPADs in terms of dark counts, afterpulsing, timing jitter, and quantum efficiency. Eventually, we highlight the motivations for considering germanium as a key material for single-photon counting in the NIR.

Paper Details

Date Published: 15 October 2007
PDF: 12 pages
Proc. SPIE 6771, Advanced Photon Counting Techniques II, 67710P (15 October 2007); doi: 10.1117/12.734961
Show Author Affiliations
Alberto Tosi, Politecnico di Milano (Italy)
Alberto Dalla Mora, Politecnico di Milano (Italy)
Franco Zappa, Politecnico di Milano (Italy)
Sergio Cova, Politecnico di Milano (Italy)

Published in SPIE Proceedings Vol. 6771:
Advanced Photon Counting Techniques II
Wolfgang Becker, Editor(s)

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