Share Email Print

Proceedings Paper

Characteristics optimization of mask materials for Hyper-NA lithography
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Hyper-NA lithography with polarized light illumination is introduced as the solution of 45nm or 32nm node technology. In that case, consideration of new characteristics of masks and substrates has been required. Mainly, following three materials, quartz substrates, absorber or phase shifter materials and pellicle films, have been discussed for that issue. Item to be discussed on quartz substrates is birefringence. It has been said that birefringence of quartz substrates affects printed CD on the wafer and is required to control on the masks or substrates. We will report how substrate birefringence affects the printed CD error by 3D simulations. Item of absorber or phase shifter material is optical characteristics. We will discuss about how optical parameters of mask materials affect to diffracted light intensity balance and how these characteristics also affect to printing performance by 3D simulation results. In the result of this section, we will show current 6%EAPSM film has good printing performance down to half pitch 45nm. Item of pellicle film is thickness optimization. It has been described in some papers that the issues will occur if the film's characteristics will not been changed. Main issue is transmission change caused by film thickness variations. We will report current pellicle film's performance and will propose how to minimize this issue by the thickness optimization. In order to confirm those items, we used the pattern model as minimum half-pitch = 45nm and target CD on the wafer = 45nm for 3D simulations. The illumination condition of the scanner was used as maximum NA=1.35, Dipole or Cross quadrupole shape and polarized illumination.

Paper Details

Date Published: 3 May 2007
PDF: 8 pages
Proc. SPIE 6533, 23rd European Mask and Lithography Conference, 653306 (3 May 2007); doi: 10.1117/12.734498
Show Author Affiliations
Yasutaka Morikawa, Dai Nippon Printing Co., Ltd. (Japan)
Takanori Suto, Dai Nippon Printing Co., Ltd. (Japan)
Takaharu Nagai, Dai Nippon Printing Co., Ltd. (Japan)
Yuichi Inazuki, Dai Nippon Printing Co., Ltd. (Japan)
Takashi Adachi, Dai Nippon Printing Co., Ltd. (Japan)
Yasuhisa Kitahata, Dai Nippon Printing Co., Ltd. (Japan)
Toshifumi Yokoyama, Dai Nippon Printing Co., Ltd. (Japan)
Nobuhito Toyama, Dai Nippon Printing Co., Ltd. (Japan)
Hiroshi Mohri, Dai Nippon Printing Co., Ltd. (Japan)
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 6533:
23rd European Mask and Lithography Conference
Uwe F. W. Behringer, Editor(s)

© SPIE. Terms of Use
Back to Top