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Proceedings Paper

Sol-gel method of p-type zinc oxide films preparation
Author(s): Armen R. Poghosyan; XiaoNan Li; Alexandr L. Manukyan; Stepan G. Grigoryan; Eduard S. Vardanyan
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Paper Abstract

Both n-type and p-type ZnO will be required for development of homojunction light-emitting diodes and laser diodes. It is easy to obtain strong n-type ZnO, but very difficult to create consistent, reliable, high-conductivity p-type material. Here we present our investigations of p-type ZnO thin film preparation by sol-gel method using single Li doping and Ga(Al)+N codoping technique. ZnO thin films with c-axis orientation have been prepared on glass substrates. Zn acetate dihydrate, gallium nitrate and acetamide were used as zinc, gallium and nitrogen precursors respectively. SEM, X-ray diffraction, electric conductivity and Hall effect measurements were carried out. The results show that p-type conducting ZnO films with hole concentrations as high as 5x1017 cm-3 were obtained by this method.

Paper Details

Date Published: 17 September 2007
PDF: 4 pages
Proc. SPIE 6698, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications, 66981D (17 September 2007); doi: 10.1117/12.734442
Show Author Affiliations
Armen R. Poghosyan, Institute for Physical Research (Armenia)
XiaoNan Li, National Renewable Energy Lab. (United States)
Alexandr L. Manukyan, Institute for Physical Research (Armenia)
Stepan G. Grigoryan, Institute for Physical Research (Armenia)
Eduard S. Vardanyan, Institute for Physical Research (Armenia)

Published in SPIE Proceedings Vol. 6698:
Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications
Ruyan Guo; Shizhuo S. Yin; Francis T.S. Yu, Editor(s)

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