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Proceedings Paper

Dielectric interface modification by UV irradiation: a novel method to control OFET charge carrier transport properties
Author(s): Niels Benson; Martin Schidleja; Christopher Siol; Christian Melzer; Heinz von Seggern
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Paper Abstract

The charge carrier transport in organic field effect transistors (OFETs) is determined by the transport properties of the insulator / organic semiconductor interface. We demonstrate that an adequate treatment of this interface results in a polarity change of the OFET charge carrier transport properties, without further altering the device structure. Illuminating the utilized PMMA polymer dielectric, by using UV radiation, leads to the introduction of mainly electron traps at the dielectric interface. This results in the suppression of the electron transport for an otherwise n-type pentacene OFET. However, as a consequence of trapped electrons in the near surface layer of the PMMA dielectric, the hole transport of the device is enabled though a hole blocking source/drain metallization. This effect, as well as the impact of the UV irradiation on the PMMA dielectric will be discussed in detail. The UV treatment yields a PMMA interface rich on polar groups. The influence of these groups on the OFET characteristics is investigated by studying several polymer dielectrics with varying content of the emerging groups.

Paper Details

Date Published: 13 September 2007
PDF: 9 pages
Proc. SPIE 6658, Organic Field-Effect Transistors VI, 66580W (13 September 2007); doi: 10.1117/12.733646
Show Author Affiliations
Niels Benson, Univ. of Technology Darmstadt (Germany)
Martin Schidleja, Univ. of Technology Darmstadt (Germany)
Christopher Siol, Univ. of Technology Darmstadt (Germany)
Christian Melzer, Univ. of Technology Darmstadt (Germany)
Heinz von Seggern, Univ. of Technology Darmstadt (Germany)

Published in SPIE Proceedings Vol. 6658:
Organic Field-Effect Transistors VI
Zhenan Bao; David J. Gundlach, Editor(s)

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