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Proceedings Paper

Investigation of material properties for zincblende AlGaN alloys applied in UV LEDs
Author(s): Bo-Ting Liou; Chieh-I Liu; Yen-Kuang Kuo
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Paper Abstract

The material properties of zincblende AlxGa1-xN alloys from first-principles calculations are investigated. It is found that the bulk moduli of zincblende AlxGa1-xN increase with an increase of aluminum composition x, but the pressure derivative of bulk modulus decreases with an increase of aluminum composition x. The bulk modulus of 199.82 ± 0.64 GPa for GaN increases to that of 213.03 ± 1.09 GPa for AlN, and the deviation parameter of bulk modulus for zincblende AlxGa1-xN is 11.18 ± 3.61 GPa. The pressure derivative of bulk modulus of 4.190 ± 0.020 for GaN decreases to that of 3.589 ± 0.030 for AlN. The refractive indices in the wavelength range of 300-600 nm are also investigated. The one-Sellmeier-term expression is used for curve-fitting analysis of the refractive index as a function of the wavelength in the transparent region, and the results should provide for the design and growth of vertical cavity structures and distributed Bragg reflectors on GaAs substrates. Finally, the direct bowing parameter of 0.446 ± 0.126 eV and indirect bowing parameter of -0.360 ± 0.242 eV are obtained. There is a direct-indirect crossover near x = 0.654 for which the band gap energy is 4.573 eV.

Paper Details

Date Published: 14 September 2007
PDF: 8 pages
Proc. SPIE 6669, Seventh International Conference on Solid State Lighting, 66691H (14 September 2007); doi: 10.1117/12.733631
Show Author Affiliations
Bo-Ting Liou, Hsiuping Institute of Technology (Taiwan)
Chieh-I Liu, Soochow Univ. (Taiwan)
Yen-Kuang Kuo, National Changhua Univ. of Education (Taiwan)


Published in SPIE Proceedings Vol. 6669:
Seventh International Conference on Solid State Lighting
Ian T. Ferguson; Nadarajah Narendran; Tsunemasa Taguchi; Ian E. Ashdown, Editor(s)

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