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Proceedings Paper

Characterization of AlF3 thin films in the ultraviolet by magnetron sputtering of aluminum target
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Paper Abstract

Aluminum fluoride thin films have been deposited by magnetron sputtering of aluminum target with CF4 , or CF4 mixed 5% O2 as working gas. To obtain low optical loss and high packing density, the films were investigated under different sputtering power and substrate temperatures. Their optical properties (including the transmittance, refractive index, and extinction coefficient) in the UV range and microstructure (including the cross section morphology, surface roughness, and crystallization) have been studied. AlF3 thin films deposited at low temperature and low sputtering power have better optical quality. The extinction coefficient of AlF3 thin films coated by 25W with CF4 mixed 5% O2 as working gas is smaller than 6.5×10-4 in the wavelength range of 190nm to 300nm

Paper Details

Date Published: 11 September 2007
PDF: 8 pages
Proc. SPIE 6645, Nanoengineering: Fabrication, Properties, Optics, and Devices IV, 66451X (11 September 2007); doi: 10.1117/12.733550
Show Author Affiliations
Bo-Huei Liao, National Central Univ. (Taiwan)
Ming-Chung Liu, National Central Univ. (Taiwan)
Cheng-Chung Lee, National Central Univ. (Taiwan)


Published in SPIE Proceedings Vol. 6645:
Nanoengineering: Fabrication, Properties, Optics, and Devices IV
Elizabeth A. Dobisz; Louay A. Eldada, Editor(s)

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