Share Email Print

Proceedings Paper

Determination of the density of trap states in organic thin film transistors
Author(s): Feng Yan
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Polymer thin-film transistors based on poly(9,9-dioctylfluorene-co-bithiophene) (F8T2) have been studied in the temperature range from 130 to 300K. In this temperature range both the field effect mobility and the drain current show thermally activated behaviour. The channel current at low gate voltage ( |Vgs|<|Vth| ) can be fitted with a power function of gate voltage. We deduce the presence of an exponential distribution of localized states above the dominant transport level from the gate bias and temperature dependence of the drain current.

Paper Details

Date Published: 13 September 2007
PDF: 7 pages
Proc. SPIE 6658, Organic Field-Effect Transistors VI, 66580C (13 September 2007); doi: 10.1117/12.733516
Show Author Affiliations
Feng Yan, The Hong Kong Polytechnic Univ. (Hong Kong China)

Published in SPIE Proceedings Vol. 6658:
Organic Field-Effect Transistors VI
Zhenan Bao; David J. Gundlach, Editor(s)

© SPIE. Terms of Use
Back to Top