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Proceedings Paper

Stimulated emission and emission efficiency enhancement in nanopatterned silicon
Author(s): Efraim Rotem; Jeffrey M. Shainline; Jimmy M. Xu
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Paper Abstract

1.278μm laser emission has been observed in a SOI structure which has been nanopatterned to contain an array of nanopores. The optical transition is identified to be associated with phononless recombination mediated by the bistable, carbon-related G center. The present work is focused on increasing the luminescence intensity from nanopatterned Si by increasing the number of G centers present in the material. The G center density is increased by increasing the concentration of substitutional atoms in the lattice prior to nanopatterning. To this end, solid-phase epitaxial regrowth of carbon-rich silicon is utilized in order to take advantage of the increased solid solubility of carbon in silicon at the interface between crystalline and amorphous solid silicon.

Paper Details

Date Published: 10 September 2007
PDF: 8 pages
Proc. SPIE 6775, Active and Passive Optical Components for Communications VII, 67750I (10 September 2007); doi: 10.1117/12.733312
Show Author Affiliations
Efraim Rotem, Brown Univ. (United States)
Jeffrey M. Shainline, Brown Univ. (United States)
Jimmy M. Xu, Brown Univ. (United States)

Published in SPIE Proceedings Vol. 6775:
Active and Passive Optical Components for Communications VII
Achyut Kumar Dutta; Yasutake Ohishi; Niloy K. Dutta; Andrei V. Lavrinenko, Editor(s)

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