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Proceedings Paper

CMOS color image sensor with overlaid organic photoelectric conversion layers having narrow absorption band: depression of dark current
Author(s): Mikio Ihama; Masayuki Hayashi; Yoshiki Maehara; Tetsurou Mitsui; Shunji Takada
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Paper Abstract

We proposed a solid=state image sensor with multi=layered structure on the basis of the combination of a charge read-out circuit with photoelectric conversion layers, which behave in similar fashion to sensitizing dyes in color films. We developed an organic photoelectric conversion layer, which selectively absorbs green light and transmits blue and red lights. By overlaying this layer on a silicon substrate having silicon photodiodes and a read-out circuit, we successfully produced a two-color sensor. Significant reduction in the dark current in the photoelectric conversion layer owing to appropriate carrier-blocking layers made it possible to take pictures with low level of noise.

Paper Details

Date Published: 12 November 2007
PDF: 9 pages
Proc. SPIE 6656, Organic Photovoltaics VIII, 66560A (12 November 2007); doi: 10.1117/12.733289
Show Author Affiliations
Mikio Ihama, Fujifilm Corp. (Japan)
Masayuki Hayashi, Fujifilm Corp. (Japan)
Yoshiki Maehara, Fujifilm Corp. (Japan)
Tetsurou Mitsui, Fujifilm Corp. (Japan)
Shunji Takada, Fujifilm Corp. (Japan)

Published in SPIE Proceedings Vol. 6656:
Organic Photovoltaics VIII
Zakya H. Kafafi; Paul A. Lane, Editor(s)

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