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Proceedings Paper

Vertical GaN based light emitting diodes on metal alloy substrate boosts high power LED performance
Author(s): T. Doan; C. Tran; C. Chu; C. Chen; W. H. Liu; J. Chu; K. Yen; H. Chen; F. Fan
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Paper Abstract

Vertical GaN based Light Emitting Diodes on metal alloy substrate (VLEDMS) were realized and characterized for solid state lighting application. An efficiency of more than 100 lumens/watt from a white LED was achieved. And, an efficiency of more than 80 lumens/watt from a high efficiency and high power green LED was achieved also. The dissipate heat more effectively than conventional and flip-chip LEDs, thanks to the higher thermal conductivity of a copper alloy substrate. This increases their maximum operating current and output power and makes them more suitable for solid-state lighting applications. In addition, these VLEDMS exhibit many advantages over those on sapphire under extreme operation conditions for general lighting application.

Paper Details

Date Published: 14 September 2007
PDF: 8 pages
Proc. SPIE 6669, Seventh International Conference on Solid State Lighting, 666903 (14 September 2007); doi: 10.1117/12.732903
Show Author Affiliations
T. Doan, SemiLEDS Corp. (United States)
C. Tran, SemiLEDS Corp. (United States)
C. Chu, Semi-Photonics (Taiwan)
C. Chen, Semi-Photonics (Taiwan)
W. H. Liu, Semi-Photonics (Taiwan)
J. Chu, Semi-Photonics (Taiwan)
K. Yen, Semi-Photonics (Taiwan)
H. Chen, Semi-Photonics (Taiwan)
F. Fan, Semi-Photonics (Taiwan)


Published in SPIE Proceedings Vol. 6669:
Seventh International Conference on Solid State Lighting
Ian T. Ferguson; Nadarajah Narendran; Tsunemasa Taguchi; Ian E. Ashdown, Editor(s)

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