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Proceedings Paper

Microstructural mobility of the polymeric gate insulator affecting pentacene charge transport
Author(s): Antonio Facchetti; Choongik Kim; Tobin J. Marks
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Paper Abstract

Organic semiconductor-dielectric interfacial characteristics play a critical role in influencing organic thin-film transistor (OTFT) performance characteristics. In this study, we report new insights into how the bulk/surface physicochemical characteristics of the gate insulator modulate the thin-film growth mode, microstructure, and OTFT performance parameters of pentacene films deposited on bilayer polymer (top)-SiO2 (bottom) gate insulators. The results demonstrate that the pentacene growth mode varies substantially with the dielectric/substrate, and correlations are established between pentacene film growth mode, the thin-film to bulk microstructural phase transition, and OTFT device performance. Furthermore, we demonstrate here for the first time the key influence of the polymeric insulator layer microstructural mobility on pentacene film growth mode and OTFT response.

Paper Details

Date Published: 13 September 2007
PDF: 6 pages
Proc. SPIE 6658, Organic Field-Effect Transistors VI, 66580P (13 September 2007); doi: 10.1117/12.732885
Show Author Affiliations
Antonio Facchetti, Northwestern Univ. (United States)
Choongik Kim, Northwestern Univ. (United States)
Tobin J. Marks, Northwestern Univ. (United States)

Published in SPIE Proceedings Vol. 6658:
Organic Field-Effect Transistors VI
Zhenan Bao; David J. Gundlach, Editor(s)

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