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Proceedings Paper

Photonic and related device applications of nano-crystalline silicon
Author(s): N. Koshida; B. Gelloz
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Paper Abstract

As the scaling of single-crystalline silicon (c-Si) size comes into the region below 4 nm corresponding to the Bohr radius of exciton in c-Si, the original optical, electrical, thermal, and chemical properties of c-Si are substantially modified due to the occurrence of quantum confinement effect. As a consequence, some useful functions are induced in various manners. Nanoporous silicon (PS), composed of highly packed quantum-sized nanosilicon dots, is regarded as a typical quantum silicon material. This paper summarizes various physical effects induced in PS: bannd gap widening, complete carrier depletion, surface activity, and so on. To indicate their technological potential, the present status of application studies is addressed in terms of visible electroluminescent device, components for photonic integration, field-induced ballistic electron emitter, thermally induced ultrasonic emitter, and biocompatible scaffold. Further technological potential is discussed from viewpoints of exploring functional integration.

Paper Details

Date Published: 10 September 2007
PDF: 9 pages
Proc. SPIE 6775, Active and Passive Optical Components for Communications VII, 67750N (10 September 2007); doi: 10.1117/12.732812
Show Author Affiliations
N. Koshida, Tokyo Univ. of Agriculture and Technology (Japan)
B. Gelloz, Tokyo Univ. of Agriculture and Technology (Japan)


Published in SPIE Proceedings Vol. 6775:
Active and Passive Optical Components for Communications VII
Achyut Kumar Dutta; Yasutake Ohishi; Niloy K. Dutta; Andrei V. Lavrinenko, Editor(s)

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