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Proceedings Paper

Measurement of ultra low film stress, local stress distribution and flatness by imaging nanotopography based on low coherence phase shifting interferometry in conjunction with wafer and film thickness metrology
Author(s): Alexander Pravdivtsev; Manuel Santos II; Ann Koo
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Paper Abstract

Tighter specifications for the deposition of thin, highly uniform films with low stress require new stress measurement techniques to resolve smallest deformations on the Nanometer scale. Uniformity maps need to cover measurement areas from a few millimeters up to whole 300 mm semiconductor wafers, which include small dies as well as lithography areas. Metrology able to measure sample's flatness, nanotopography and film stress components on all the variety of the samples, is very urgent today. Its accuracy and reproducibility should be at nanometers. We discuss a combined solution using complementary measurements of nanotopography, substrate thickness and film thickness, for the stress analysis and stress uniformity measurement on samples with thin films and with very low stress causing shallow deformations having a curvature radius up to several kilometers.

Paper Details

Date Published: 10 September 2007
PDF: 9 pages
Proc. SPIE 6672, Advanced Characterization Techniques for Optics, Semiconductors, and Nanotechnologies III, 66720P (10 September 2007); doi: 10.1117/12.732711
Show Author Affiliations
Alexander Pravdivtsev, Frontier Semiconductor (United States)
Manuel Santos II, Frontier Semiconductor (United States)
Ann Koo, Frontier Semiconductor (United States)

Published in SPIE Proceedings Vol. 6672:
Advanced Characterization Techniques for Optics, Semiconductors, and Nanotechnologies III
Angela Duparré; Bhanwar Singh; Zu-Han Gu, Editor(s)

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