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Proceedings Paper

PECVD deposition of a-Si:H and µc-Si:H using a linear RF source
Author(s): Bas B. Van Aken; Camile Devilee; Maarten Dörenkämper; Marco Geusebroek; Maurits Heijna; Jochen Löffler; Wim J. Soppe
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Paper Abstract

ECN is aiming at the development of fabrication technology for roll-to-roll production lines for high efficiency thin film amorphous and microcrystalline silicon solar cells. The intrinsic layer will be deposited with high deposition rate microwave plasma enhanced chemical vapour deposition. This plasma source, however, is not suitable for the deposition of doped layers. Therefore, we use a novel, linear RF source for the deposition of doped layers. In this RF source, the substrate is electrically disconnected from the RF network. As a result, the ion bombardment onto the substrate is very mild, with ion energies typically < 10 eV. The low ion energies make this source very attractive for surface treatments like passivation of crystalline silicon wafers by thin SiNx or a-Si layers. In this contribution, we will introduce the novel RF source and discuss the deposition of device quality amorphous and microcrystalline intrinsic Si layers with the novel linear RF source.

Paper Details

Date Published: 11 September 2007
PDF: 8 pages
Proc. SPIE 6651, Photovoltaic Cell and Module Technologies, 66510C (11 September 2007); doi: 10.1117/12.732383
Show Author Affiliations
Bas B. Van Aken, ECN Solar Energy (Netherlands)
Camile Devilee, ECN Solar Energy (Netherlands)
Maarten Dörenkämper, ECN Solar Energy (Netherlands)
Marco Geusebroek, ECN Solar Energy (Netherlands)
Maurits Heijna, ECN Solar Energy (Netherlands)
Jochen Löffler, ECN Solar Energy (Netherlands)
Wim J. Soppe, ECN Solar Energy (Netherlands)

Published in SPIE Proceedings Vol. 6651:
Photovoltaic Cell and Module Technologies
Bolko von Roedern; Alan E. Delahoy, Editor(s)

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