Share Email Print

Proceedings Paper

High performance n-type FETs based on heterocyclic ring systems with trifluoromethylphenyl groups
Author(s): Yoshiro Yamashita; Satoshi Shimono; Takahiro Kono; Daisuke Kumaki; Jun-ichi Nishida; Shizuo Tokito
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

High performance n-type FETs have been accomplished by using novel heterocyclic systems with trifluoromethylphenyl groups. To enhance intermolecular interactions, selenophene rings were introduced. Some FET devices showed higher electron mobilities than 0.1 cm2V-1s-1. The mobilities of the selenophene-containing materials were higher than those of the corresponding thiophene analogues. The relationship between the structures and FET characteristics have been investigated. The threshold voltages were reduced by introducing heterocyclic units with higher electron affinity.

Paper Details

Date Published: 13 September 2007
PDF: 8 pages
Proc. SPIE 6658, Organic Field-Effect Transistors VI, 66580N (13 September 2007); doi: 10.1117/12.732242
Show Author Affiliations
Yoshiro Yamashita, Tokyo Institute of Technology (Japan)
Satoshi Shimono, Tokyo Institute of Technology (Japan)
Takahiro Kono, Tokyo Institute of Technology (Japan)
Daisuke Kumaki, Tokyo Institute of Technology (Japan)
Jun-ichi Nishida, Tokyo Institute of Technology (Japan)
Shizuo Tokito, NHK Science and Technical Research Labs. (Japan)

Published in SPIE Proceedings Vol. 6658:
Organic Field-Effect Transistors VI
Zhenan Bao; David J. Gundlach, Editor(s)

© SPIE. Terms of Use
Back to Top