Share Email Print
cover

Proceedings Paper

Numerical studies of semiconductor nanowire electrostatics
Author(s): Devesh R. Khanal; Junqiao Wu
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We present finite-element calculations of the electrostatics of NWFETs and numerical simulations of band bending, charge distributions, and dopant ion diffusion in NWs. For NWFETs, we find that the semiconducting nature and finite length of the NW warrant sizeable corrections to capacitance calculations using the standard analytical formula and simulations that assume a metallic NW. We thus provide a comprehensive set of correction factors to these approximations. We also present a possible mechanism for explaining non-uniform dopant distributions involving electrodiffusion of charged dopant ions at high temperatures. We find that changes in the internal NW electrostatics due to non-uniform dopant distributions can have significant effects on the free carrier concentration and therefore conductivity of semiconductor NWs.

Paper Details

Date Published: 10 October 2007
PDF: 13 pages
Proc. SPIE 6768, Nanomaterials Synthesis, Interfacing, and Integrating in Devices, Circuits, and Systems II, 67680D (10 October 2007); doi: 10.1117/12.732228
Show Author Affiliations
Devesh R. Khanal, Univ. of California, Berkeley (United States)
Lawrence Berkeley National Lab. (United States)
Junqiao Wu, Univ. of California, Berkeley (United States)
Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 6768:
Nanomaterials Synthesis, Interfacing, and Integrating in Devices, Circuits, and Systems II
Nibir K. Dhar; Achyut K. Dutta; M. Saif Islam, Editor(s)

© SPIE. Terms of Use
Back to Top