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Proceedings Paper

Front and back side processed unintentionally doped GaAs Schottky detectors for X-ray detection
Author(s): A. Fred Semendy; Satpal Singh; Mark Litz; Priyalal Wijewarnasuriya; Kara Blaine; Nibir Dhar
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Paper Abstract

We have studied the current voltage and X-ray detection using front and back side processed, unintentionally doped bulk GaAs Schottky detectors. GaAs detectors with large enough thickness and low enough doping could be used for X-ray imaging, especially for medical applications. GaAs Schottky detectors were fabricated using front and back side photolithographic processing with Ti/Au for Schottky and Ge/Au/Ni/Au for Ohmic contacts. A number of detectors of size 2 mm2 were tested. The breakdown voltage reached 600- 800 V in semi insulated (SI) GaAs Schottky front and back side processed detectors. For these detectors the dark current was found to be between 2- 90 nA. These detectors were also characterized with 150 keV, 3mA X-ray radiation and they responded well by showing more than a hundred fold increase in photocurrent due to production of electron hole pairs by the ionization processes. The processing of the detectors and the I-V and X-ray characterization is presented in this report.

Paper Details

Date Published: 18 September 2007
PDF: 9 pages
Proc. SPIE 6703, Ultrafast X-Ray Sources and Detectors, 67030N (18 September 2007); doi: 10.1117/12.732121
Show Author Affiliations
A. Fred Semendy, Army Research Lab. (United States)
Satpal Singh, Prime Circuits (United States)
Mark Litz, SEDD, Army Research Labs (United States)
Priyalal Wijewarnasuriya, SEDD, Army Research Labs (United States)
Kara Blaine, SEDD, Army Research Labs (United States)
Nibir Dhar, SEDD, Army Research Labs (United States)


Published in SPIE Proceedings Vol. 6703:
Ultrafast X-Ray Sources and Detectors
Zenghu Chang; George A. Kyrala; Jean-Claude Kieffer, Editor(s)

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