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Proceedings Paper

Correlation between the photoconductivity and the nanostructure of hot-wire deposited silicon-germanium alloys analyzed by anomalous small-angle x-ray scattering
Author(s): G. Goerigk; D. L. Williamson
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Paper Abstract

The nanostructure of hydrogenated amorphous silicon-germanium alloys, a-Si1-xGex:H (x=0.62 to 0.70), prepared by the hot-wire deposition technique applying different substrate and filament temperatures was analyzed by anomalous small-angle x-ray scattering experiments. For all alloys the Ge-component was found to be inhomogeneously distributed. The results from the structural and quantitative analysis have been correlated to the material photoconductivity. A clear improvement of the photoconductivity was achieved by optimizing the substrate temperature (between 130 and 360 °C) due to the reduction of hydrogen containing voids in coincidence with the formation of mass fractal structures of Ge with the fractal dimension p < 1.6 and a size of about 40 nm. The two processes cause the structural re-organization of Hydrogen from voids into Ge-fractals with enhanced Ge-H bonding, thereby improving the material photoconductivity.

Paper Details

Date Published: 11 September 2007
PDF: 13 pages
Proc. SPIE 6651, Photovoltaic Cell and Module Technologies, 66510D (11 September 2007); doi: 10.1117/12.732034
Show Author Affiliations
G. Goerigk, Institut für Festkörperforschung, Forschungszentrum Jülich (Germany)
D. L. Williamson, Colorado School of Mines (United States)


Published in SPIE Proceedings Vol. 6651:
Photovoltaic Cell and Module Technologies
Bolko von Roedern; Alan E. Delahoy, Editor(s)

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