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Proceedings Paper

Integrated AlGaInAs-silicon evanescent racetrack laser and photodetector
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Paper Abstract

Recently, AlGaInAs-silicon evanescent lasers have been demonstrated as a method of integrating active photonic devices on a silicon based platform. This hybrid waveguide architecture consists of III-V quantum wells bonded to silicon waveguides. The self aligned optical mode leads to a bonding process that is manufacturable in high volumes. Here give an overview of a racetrack resonator laser integrated with two photo-detectors on the hybrid AlGaInAs-silicon evanescent device platform. Unlike previous demonstrations of hybrid AlGaInAs-silicon evanescent lasers, we demonstrate an on-chip racetrack resonator laser that does not rely on facet polishing and dicing in order to define the laser cavity. The laser runs continuous-wave (c.w.) at 1590 nm with a threshold of 175 mA, has a maximum total output power of 29 mW and a maximum operating temperature of 60 C. The output of this laser light is directly coupled into a pair of on chip hybrid AlGaInAs-silicon evanescent photodetectors used to measure the laser output.

Paper Details

Date Published: 10 September 2007
PDF: 8 pages
Proc. SPIE 6775, Active and Passive Optical Components for Communications VII, 67750P (10 September 2007); doi: 10.1117/12.731951
Show Author Affiliations
Alexander W. Fang, Univ. of California, Santa Barbara (United States)
Richard Jones, Intel Corp. (United States)
Hyundai Park, Univ. of California, Santa Barbara (United States)
Oded Cohen, Intel Corp. (Israel)
Omri Raday, Intel Corp. (Israel)
Mario J. Paniccia, Intel Corp. (United States)
John E. Bowers, Univ. of California, Santa Barbara (United States)


Published in SPIE Proceedings Vol. 6775:
Active and Passive Optical Components for Communications VII
Achyut Kumar Dutta; Yasutake Ohishi; Niloy K. Dutta; Andrei V. Lavrinenko, Editor(s)

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