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Proceedings Paper

High performance long wavelength quantum dot lasers on GaAs
Author(s): P. Bhattacharya; Z. Mi
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Paper Abstract

We have investigated the molecular beam epitaxial growth and characteristics of long wavelength InAs pseudomorphic and metamorphic quantum dot lasers grown on GaAs. Utilizing the techniques of tunnel injection and acceptor-doping of quantum dots, we have achieved high performance 1.3 μm InAs quantum dot lasers on GaAs, which exhibit Jth=180 A/cm2, T0=∞, dg/dn≈1×10-14 cm2, f-3dB =11 GHz, chirp of 0.1 Å and zero α-parameter. By detailed investigation of the growth kinetics and characteristics of metamorphic quantum dot heterostructures on GaAs, we have demonstrated high performance 1.5 μm InAs metamorphic quantum dot lasers on GaAs that are characterized Jth~60A/cm2, T0≈620K, and near-zero α-parameter and chirp (~ 0.1 Å).

Paper Details

Date Published: 10 September 2007
PDF: 10 pages
Proc. SPIE 6779, Nanophotonics for Communication: Materials, Devices, and Systems IV, 677908 (10 September 2007); doi: 10.1117/12.731791
Show Author Affiliations
P. Bhattacharya, Univ. of Michigan (United States)
Z. Mi, Univ. of Michigan (United States)

Published in SPIE Proceedings Vol. 6779:
Nanophotonics for Communication: Materials, Devices, and Systems IV
Nibir K. Dhar; Achyut Kumar Dutta; M. Saif Islam, Editor(s)

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