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Proceedings Paper

Narrow-linewidth high-power semiconductor laser with external feedback
Author(s): Zdeněk Buchta; Jan Rychnovský; Josef Lazar
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Paper Abstract

We present an extended cavity laser system based on a tunable high-power laser diode optimized for maximum efficiency of the optical pumping process of Rb atoms. The aplication of the laser system is orineted to employment in an experimental arrangement for production of hyperpolarized gasses (HpG), namely Xenon. It is designed to operate in medical and industrial applications to come. We concentrated on the laser diode emission linewidth reduction because of the efficiency of the optical pumping process. The emission linewidth was reduced approximately from 1 THz to 69 GHz with only half of the total optical power loss and quadruple increase of the power spectral density at the wavelength of desire.

Paper Details

Date Published: 25 April 2007
PDF: 5 pages
Proc. SPIE 6606, Advanced Laser Technologies 2006, 660606 (25 April 2007); doi: 10.1117/12.729504
Show Author Affiliations
Zdeněk Buchta, Institute of Scientific Instruments (Czech Republic)
Brno Univ. of Technology (Czech Republic)
Jan Rychnovský, Institute of Scientific Instruments (Czech Republic)
Brno Univ. of Technology (Czech Republic)
Josef Lazar, Institute of Scientific Instruments (Czech Republic)


Published in SPIE Proceedings Vol. 6606:
Advanced Laser Technologies 2006

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