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Proceedings Paper

Monte-Carlo modeling of monolithic CMOS sensors for X-ray and charged-particle imaging
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Paper Abstract

A Monte Carlo model has been developed for epitaxial silicon active pixel sensor arrays. Ionization generation of 55Fe X-rays and high energy electrons are modeled directly using random numbers that follow an exponential distribution and a Bichsel distribution, respectively. Both the simulation and measurement have identified a considerable bulk-silicon substrate contribution to collected ionization electrons, which is important in accurate modeling of sensor response to high energy electrons.

Paper Details

Date Published: 24 September 2007
PDF: 10 pages
Proc. SPIE 6707, Penetrating Radiation Systems and Applications VIII, 67070O (24 September 2007); doi: 10.1117/12.729406
Show Author Affiliations
Shengdong Li, Univ. of California, Irvine (United States)
Howard S. Matis, Lawrence Berkeley National Lab. (United States)
Stuart Kleinfelder, Univ. of California, Irvine (United States)

Published in SPIE Proceedings Vol. 6707:
Penetrating Radiation Systems and Applications VIII
F. Patrick Doty; H. Bradford Barber; Hans Roehrig, Editor(s)

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