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Proceedings Paper

Evaluation of defect inspection sensitivity using 199-nm inspection optics
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Paper Abstract

We evaluated the capability of a commercially available DUV system equipped with reflective inspection optics with the shortest inspection wavelength of 199nm in detecting pattern defect on EUVL mask of hp45nm programmed defect pattern. The sensitivity of the system for opaque extension defects for hp45nm node was quite acceptable but for clear extension defects the sensitivity of the system was rather poor. In this paper, the influence of base pattern size on inspection sensitivities for opaque and clear extension defects is discussed.

Paper Details

Date Published: 15 May 2007
PDF: 9 pages
Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 66073F (15 May 2007); doi: 10.1117/12.729034
Show Author Affiliations
Tsuyoshi Amano, Semiconductor Leading Edge Technologies, Inc. (Japan)
Yasushi Nishiyama, Semiconductor Leading Edge Technologies, Inc. (Japan)
Hiroyuki Shigemura, Semiconductor Leading Edge Technologies, Inc. (Japan)
Tsuneo Terasawa, Semiconductor Leading Edge Technologies, Inc. (Japan)
Osamu Suga, Semiconductor Leading Edge Technologies, Inc. (Japan)
Hideaki Hashimoto, NuFlare Technology Inc. (Japan)
Shingo Murakami, Advanced Mask Inspection Technology, Inc. (Japan)
Nobutaka Kikuiri, Advanced Mask Inspection Technology, Inc. (Japan)


Published in SPIE Proceedings Vol. 6607:
Photomask and Next-Generation Lithography Mask Technology XIV
Hidehiro Watanabe, Editor(s)

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