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Proceedings Paper

Thermal analysis of EUV mask under inspection laser beam irradiation
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Paper Abstract

Temperature of EUV mask surface under inspection laser beam irradiation is modeled and simulated. Various conditions including beam power, beam size, irradiation time, and wavelength are considered. Calculation program for this study has two components: at first, average power passing through the film is calculated from optical properties of materials, and then heat transfer equations are solved using finite difference method. Temperature of multilayer below the absorber depends on the optical properties of absorber film surface. At the wavelength of deep ultraviolet region, temperature of multilayer below the absorber rises higher than in the temperature of multilayer directly exposed to the beam.

Paper Details

Date Published: 15 May 2007
PDF: 8 pages
Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 66073B (15 May 2007); doi: 10.1117/12.729030
Show Author Affiliations
Yasushi Nishiyama, Semiconductor Leading Edge Technologies, Inc. (Japan)
Tsuyoshi Amano, Semiconductor Leading Edge Technologies, Inc. (Japan)
Hiroyuki Shigemura, Semiconductor Leading Edge Technologies, Inc. (Japan)
Tsuneo Terasawa, Semiconductor Leading Edge Technologies, Inc. (Japan)
Osamu Suga, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 6607:
Photomask and Next-Generation Lithography Mask Technology XIV
Hidehiro Watanabe, Editor(s)

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