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Proceedings Paper

Inverse lithography technology (ILT): a natural solution for model-based SRAF at 45-nm and 32-nm
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Paper Abstract

In this paper, we present the Luminescent's ILT approach that can rapidly solve for the optimal photomask design. We will discuss the latest development of ILT at Luminescent in the areas of sub-resolution assist feature (SRAF) generation, process-window-based ILT and mask rule compliance (MRC). Results collected internally and from customers demonstrate that ILT is not only an R&D tool, but also a tool quickly maturing for production qualification at advanced technology nodes. By enforcing the proper constraints while optimizing the masks, ILT can improve process windows while maintaining mask costs at a reasonable level.

Paper Details

Date Published: 15 May 2007
PDF: 10 pages
Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 660739 (15 May 2007); doi: 10.1117/12.729028
Show Author Affiliations
Linyong Pang, Luminescent Technologies, Inc. (United States)
Yong Liu, Luminescent Technologies, Inc. (United States)
Dan Abrams, Luminescent Technologies, Inc. (United States)


Published in SPIE Proceedings Vol. 6607:
Photomask and Next-Generation Lithography Mask Technology XIV
Hidehiro Watanabe, Editor(s)

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