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Proceedings Paper

Extendibility of single mask exposure for practical ArF immersion lithography
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Paper Abstract

The ArF water immersion is one of the most promising candidate technologies for 45-nm node lithography. But it have been predicted that the realization of 32-nm node (minimum half pitch 45nm) is very difficult when using the water immersion of 1.35 NA and single mask exposure. Therefore, some double-exposure technologies are expected for 32-nm node logic device. However, the single mask exposure would be expected because it has very big advantage of short process time and/or cost etc., compared to other double-exposure methods. In this research, we evaluated two NA setting of ArF immersion as the models and the required structure and error budget of photomasks. One is the maximum NA of water immersion (= 1.35) and another is using high refractive index materials with NA of 1.55. The lithographic performance was evaluated for line and space pattern through various pattern pitches with optical proximity correction (OPC). The evaluation items of printing performance are CD-DOF, contrast-DOF and MEEF, etc. The suitable kind of mask and structure are also considered with effect of several kinds of mask topography error. The limit of single mask exposure will be examined by setting the restriction such as minimum half pitch and so on.

Paper Details

Date Published: 15 May 2007
PDF: 10 pages
Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 660735 (15 May 2007); doi: 10.1117/12.729024
Show Author Affiliations
Takashi Adachi, Dai Nippon Printing Co., Ltd. (Japan)
Yuichi Inazuki, Dai Nippon Printing Co., Ltd. (Japan)
Takanori Sutou, Dai Nippon Printing Co., Ltd. (Japan)
Takaharu Nagai, Dai Nippon Printing Co., Ltd. (Japan)
Nobuhito Toyama, Dai Nippon Printing Co., Ltd. (Japan)
Yasutaka Morikawa, Dai Nippon Printing Co., Ltd. (Japan)
Hiroshi Mohri, Dai Nippon Printing Co., Ltd. (Japan)
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 6607:
Photomask and Next-Generation Lithography Mask Technology XIV
Hidehiro Watanabe, Editor(s)

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